inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc n-channel mosfet transistor 6N80 features drain current i d = 6a@ t c =25 drain source voltage : v dss = 800v(min) static drain-source on-resistance : r ds(on) = 2 (max) avalanche energy specified fast switching simple drive requirements descrition switch mode power supply. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 800 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 6 a i dm drain current-single plused 24 a p d total dissipation @t c =25 150 w t j max. operating junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.83 /w r th j-a thermal resistance, junction to ambient 40 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc n-channel mosfet transistor 6N80 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =250 a 800 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s = 10a ;v gs = 0 2.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 0.85a 1.2 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =700v; v gs = 0 250 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 3678 pf c rss reverse transfer capacitance 816 c oss output capacitance 293 t r rise time v gs =10v; i d =5.0a; v dd =406v; r l =10 280 ns t d(on) turn-on delay time 130 t f fall time 210 t d(off) turn-off delay time 630 pdf pdffactory pro www.fineprint.cn
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